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Thin Film Sample

　

　 　　　　　

 


 

Model　

STA-9000-#

STA-6000-#

Substrate

Si 4inch

Film

SiO2

Measuring method
N: No measurement
C: 5kind Center Only
M: 5kind 100 point mapping
* #“N・C・M”

Thickness

22nm：60nm:125nm

206nm:892nm

96nm：110nm:125nm

407nm:606nm

Grid

50μ:200μ:400μ

50μ:100μ:500μ

（Measured by MARY-102）

 

＞Dimensions

 

＞Example (Inspection report)